Huge on-Current Ferroelectric-Gate Thin Film Transistor with Solution-Processed Indium Tin Oxide Channel

Authors: Do, Hong Minh
Vu, Thi Huyen Trang
Bui, Nguyen Quoc Trinh
Keywords: PZT;Thin film transistor (TFT);ferroelectric;ITO;FeRAM
Issue Date: 2014
Publisher: H. : ĐHQGHN
Series/Report no.: Vol. 30;No. 1 (2014)
Abstract: We have demonstrated ferroelectric-gate thin film transistors (FGTs) using solution-processed indium tin oxide (ITO) film as an oxide-semiconductor channel and Pb1.2Zr0.4Ti0.6O3 ferroelectric film as a gate insulator on a poly-crystalline 100-nm-STO/SiO2/Si substrate or a single-crystalline STO(111) wafer. The FGTs show a clear memory function with an on/off current ratio of more than 105 and a memory window of 2 V. It is interesting that even using solution-processed ITO channel, the saturated “on” current in the FGT reached as high as 4.6 mA at operation voltages of 8 V, corresponding to a field-effect mobility of 8.0 cm2/Vs, for the case of single-crystalline STO(111) wafer. The large “on” current is mainly due to the huge induced charge of the ferroelectric gate, compensated to the small mobility of the ITO channel.
Description: p. 16-23
ISSN: 2588-1124
Appears in Collections:Mathematics and Physics

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